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Part Name(s) : 2322-592-1406 2322-592-1706 2322-592-3516 2322-593-1406 2322-593-1706 2322-593-2506 2322-593-3516 2322-594-1406 2322-594-1706 2322-594-3516

Vishay Semiconductors

Description : BC Components

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Part Name(s) : NX8564-AZ NX8564LE NX8565-AZ NX8565LE NX8566-AZ NX8566LE NX8564LE287-CC NX8564LE287-BC NX8564LE295-CC NX8564LE295-BC

California Eastern Laboratories.

Description : NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 360, 600, 240 km DWDM APPLICATIONS

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Part Name(s) : NX8560SJ NX8560SJ287-BC NX8560SJ287-CC NX8560SJ291-BC NX8560SJ291-CC NX8560SJ295-BC NX8560SJ295-CC NX8560SJ299-BC NX8560SJ299-CC NX8560SJ303-BC

California Eastern Laboratories.

Description : NECs EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED 1550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s APPLICATIONS

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Part Name(s) : NX7561JB-BC-AZ NX7561JB-BC NX7561

California Eastern Laboratories.

Description : NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (135 mW MIN)

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Part Name(s) : Q62702-C149 Q62702-C150 Q62702-C151 Q62702-C167 Q62702-C168 Q62702-C170 Q62702-C172 Q62702-C173 Q62702-C175 Q62702-C177

Siemens AG

Description : PNP Silicon Transistors

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Part Name(s) : NX7361JB-BC NX7361JB-BC-AZ

California Eastern Laboratories.

Description : NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (150 mW MIN)

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Part Name(s) : NX8567SA NX8567SA287-CC NX8567SA287-BC NX8567SA291-CC NX8567SA291-BC NX8567SA295-CC NX8567SA295-BC NX8567SA299-CC NX8567SA299-BC NX8567SA303-CC

California Eastern Laboratories.

Description : NEC'S EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 240, 360, 600 km DWDM APPLICATIONS

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Part Name(s) : BC876 BC878 BC880 C62702-C941 C62702-C942 C62702-C943

Siemens AG

Description : PNP Silicon Darlington Transistors

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Part Name(s) : BC846AW BC846BW BC847AW BC847BW BC847CW BC848AW BC848BW BC848CW BC849BW BC849CW

Siemens AG

Description : NPN Silicon AF Transistor

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Part Name(s) : BC636 BC638 BC640 Q68000-A3365 Q68000-A3366 Q68000-A3367

Siemens AG

Description : PNP Silicon AF Transistors

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Part Name(s) : NX7661JB-BC-AZ NX7661 NX7661JB-BC

California Eastern Laboratories.

Description : NEC's 1625 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW MIN)

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Part Name(s) : BC856AW BC856BW BC856W BC856W-BC860W BC857AW BC857BW BC857CW BC858AW BC858BW BC858CW

Siemens AG

Description : PNP Silicon AF Transistors

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Part Name(s) : BC876 BC878 BC880 C62702-C941 C62702-C942 C62702-C943

Infineon Technologies

Description : PNP Silicon Darlington Transistors

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Part Name(s) : BC635 BC637 BC639 Q68000-A2285 Q68000-A3360 Q68000-A3361

Infineon Technologies

Description : NPN Silicon AF Transistors

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Part Name(s) : BC846 BC846-BC850 BC846A BC846B BC847 BC847A BC847B BC847C BC848 BC848A

Siemens AG

Description : NPN Silicon AF Transistors

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Part Name(s) : NX8663JB-BC NX8663JB-BC-AZ

California Eastern Laboratories.

Description : LASER DIODE 1 650nm InGaAsP MQW-DFB DC-PBH PULSED LASER DIODE MODULE FOR OTDR APPLICATION

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Part Name(s) : NX7363JB-BC NX7363JB-BC-AZ

California Eastern Laboratories.

Description : InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION

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Part Name(s) : NX7563JB-BC NX7563JB-BC-AZ

California Eastern Laboratories.

Description : InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION

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Part Name(s) : NX7663JB-BC NX7663JB-BC-AZ

California Eastern Laboratories.

Description : InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION

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Part Name(s) : BC161/BC141 BC160/BC140

Siemens AG

Description : PNP Silicon Transistors

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